Freiberger Compound Materials GmbH

Freiberger Compound Materials GmbH (FCM) offers high-quality III-V substrate wafers made of GaAs, InP, and GaN for the most demanding micro- and optoelectronic applications. With products meeting the highest quality standards, FCM has earned an excellent reputation on the world market.

The company's history traces back to 1957 with the founding of VEB Spurenmetalle Freiberg (SMF) as a state enterprise for the development and production of high-purity materials and semiconductor materials such as Ge, Si, Ga, As. The foundations were laid in the Institute for Non-Ferrous Metals established in 1949. In 1958, the first germanium dioxide was produced. From 1960, construction of a large-scale production pilot plant began, which by the mid-1960s enabled the growth of Ge crystals alongside a significant increase in germanium dioxide production. From the mid-1960s, silicon began to establish itself as an alternative to germanium.

Product categories. GaAs wafers · InP wafers · GaN wafers

1. GaAs Wafer - Freiberger Compound Materials
2. Unternehmen - Freiberger Compound Materials